The invention refers to a filament arrangement for hot wire chemical vapour deposition of semiconductor or dielectric layers, comprising a catalytic filament (4) for catalytic conversion of precursor molecules, and two chemically inert filaments (3) which are each joined in an electrically conductive way to opposite ends of the catalytic filament. The invention also refers to a method for depositing semiconductor or dielectric layers by hot wire chemical vapour deposition on a substrate, comprising heating a catalytic filament (4) by means of an electric current and exposing the catalytic filament (4) to an atmosphere comprising precursor molecules which are thereby catalytically converted. According to the invention the electric current is applied to the catalytic filament (4) via chemically inert filaments (3) which are each joined in an electrically conductive way to opposite ends of the catalytic filament (4).
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