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Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
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机译:用于去除蚀刻后光致抗蚀剂和底部抗反射涂层的组合物
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摘要
An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
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