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SEMICONDUCTOR DEVICE MANUFACTURING METHOD CAPABLE OF MAKING SMALL SIZE AND HIGH CAPACITY SEMICONDUCTOR DEVICES

机译:具有小尺寸,高容量的半导体装置的半导体装置的制造方法

摘要

PURPOSE: A semiconductor device manufacturing method is provided to arrange a dummy pattern appropriate to the shape of a through-silicon via, thereby stably arranging the through-silicon via in a state in which multiple chips are laminated.;CONSTITUTION: A first region is defined in order to arrange a through-silicon via penetrating a semiconductor chip. A second region is defined in order to actually arrange the through-silicon via within the first region. A dummy pattern(32) is arranged in a region excluding a third region(A1) among the first region. The dummy pattern(31) is arranged also in the inside of a fourth region(A2). The dummy pattern for wafer open adjustment is arranged based on a separated region with fixed intervals(d1,d2).;COPYRIGHT KIPO 2012
机译:目的:提供一种半导体器件的制造方法,以布置适合于硅通孔形状的虚设图案,从而在层叠多个芯片的状态下稳定地布置硅通孔。为了穿过半导体芯片布置贯穿硅而定义。定义第二区域以便实际上在第一区域内布置硅通孔。在第一区域中的除了第三区域(A1)之外的区域中布置有虚设图案(32)。虚拟图案(31)也布置在第四区域(A2)的内部。基于间隔固定(d1,d2)的分隔区域排列用于晶圆开度调整的虚拟图案。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20110131672A

    专利类型

  • 公开/公告日2011-12-07

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20100051233

  • 发明设计人 YOON YOUNG HEE;RYU NAM GYU;

    申请日2010-05-31

  • 分类号H01L23/48;H01L23/12;

  • 国家 KR

  • 入库时间 2022-08-21 17:11:27

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