METHOD FOR MANUFACTURING A VERTICAL STRUCTURE TYPE LIGHT EMITTING DIODE CAPABLE OF SIMULTANEOUSLY OBTAINING OHMIC FEATURES AND LIGHT REFLECTION FEATURES

摘要

PURPOSE: A method for manufacturing a vertical structure type light emitting diode is provided to prevent stress applied to a semiconductor layer by a nitrogen gas and a gallium seed, thereby increasing a yield and enhancing device features.;CONSTITUTION: A semiconductor layer(120) is formed on a substrate(110). A p-type electrode(130) is formed on the semiconductor layer. A pattern connected from the p-type electrode to the substrate has a fixed depth. A support layer(140) is formed on the p-type electrode. The pattern is exposed by grinding the lower surface of the substrate. The substrate is separated from the semiconductor layer.;COPYRIGHT KIPO 2012