GATE DRIVE CIRCUIT OF AN INVERTER CAPABLE OF PREVENTING AN IGBT FROM BEING TURNED OF WHEN THE IGBT IS TURNED OFF

摘要

PURPOSE: A gate drive circuit of an inverter is provided to prevent an IGBT(Insulated Gate Bipolar transistor) from being turned on using a transistor connected between the gate and the emitter of the IGBT.;CONSTITUTION: A gate drive circuit(10) is driven by a control signal applied from a driving unit. The gate drive circuit controls a voltage applied to the gate electrode of an IGBT controlling a large capacitive driving motor. The gate drive circuit includes a push-pull circuit for amplification which is made of an N type first transistor(Q1) and a P type second transistor(Q2). The gate drive circuit is made of a first resistor(R1) and a second resistor(R2). The first resistor controls a gate current of an IGBT. The third transistor fixes the gate voltage of the IGBT.;COPYRIGHT KIPO 2012