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METHOD FOR FORMING ZnO NANOWIRES PATTERNED SELECTIVELY ON SUBSTRATE VIA WET ETCHING
METHOD FOR FORMING ZnO NANOWIRES PATTERNED SELECTIVELY ON SUBSTRATE VIA WET ETCHING
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机译:通过湿刻蚀选择性地在基质上形成ZnO纳米线的方法
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摘要
PURPOSE: A method for forming ZnO nanowires is provided to grow zinc oxide nano wires on a patterned zinc oxide seed layer on a substrate through wet etching and to enhance the relation with a semiconductor process. CONSTITUTION: A method for forming ZnO nanowires comprises the steps of: laminating a zinc oxide seed layer on a substrate; patterning the zinc oxide seed layer through a photolithography process; dipping a substrate in which a patterned zinc oxide seed layer is formed, in a mixed solution of ammonia and hydrogen peroxide to wet etch the zinc oxide seed layer of non-patterned part; and growing zinc oxide nano wires on the patterned zinc oxide seed layer.
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