SEMICONDUCTOR DEVICE MANUFACTURING METHOD CAPABLE OF PREVENTING THE GENERATION OF HUMP PHENOMENA

摘要

PURPOSE: A semiconductor device manufacturing method is provided to not overlap a gate electrode and an edge part of an active region, thereby preventing channel formation in the edge part of the active region.;CONSTITUTION: A device separation region(110) is arranged in order to define an active region(120) in a semiconductor substrate. A gate electrode(130) is arranged on the device separation region and active region in order to traverse the active region. One or more gate electrode open parts are arranged in the gate electrode in order to be overlapped with the edge part of the active region. The gate electrode open part is arranged with the gate electrode at the same time. A source and drain region(151,152) is arranged in both sides of the gate electrode.;COPYRIGHT KIPO 2012