SILICON DEVICE STRUCTURE AND A SPUTTERING TARGET MATERIAL USED IN FORMING THE SAME, CAPABLE OF IMPROVING A SATURATION TRANSFER PROPERTY

摘要

PURPOSE: A silicon device structure and a sputtering target material used in forming the same is provided to suppress the diffusion from a Cu-Mn-P alloy to an n·a-Si film by using a Cu-Mn-p alloy.;CONSTITUTION: A gate electrode layer(10) is formed on a glass substrates(11). A gate insulating layer(9) is formed on the gate electrode layer. An amorphous silicon(8) is formed on the gate insulating layer. An n·a-Si film(6) is formed on the amorphous silicon. An Si oxide film(5) is formed on the n·a-Si film. A Cu alloy film(4) is formed on the Si oxide film.;COPYRIGHT KIPO 2012