RESISTANCE CHANGE MEMORY WHICH USES SOLID ELECTROLYTE INCLUDING PLURALITY OF METAL LAYERS CAPABLE OF EFFECTIVELY PERFORMING MULTI BIT OPERATION OF RESISTANCE CHANGE MEMORY

摘要

PURPOSE: A resistance change memory which uses a solid electrolyte including a plurality of metal layers is provided to improve uniformity of low resistance region distribution and high resistance region distribution existing in the solid electrolyte between electrodes, thereby reducing a resistance value margin between levels required for multi level operation.;CONSTITUTION: A solid electrolyte includes metal. A SiO2 and Si substrate layer is arranged in the lower part of the solid electrolyte. An electrode applies voltage in the solid electrolyte. A current flowing in the solid electrolyte is changed according to the voltage applied by the electrode. One or more metal layers are inserted in the solid electrolyte.;COPYRIGHT KIPO 2012