METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE CAPABLE OF SUPPRESSING THE DECREASE OF A THRESHOLD VOLTAGE DUE TO A HOLE CHARGING

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a floating body effect by connecting a channel area to a substrate.;CONSTITUTION: A pillar pattern(105) including a sidewall contact is formed on the upper side of a semiconductor substrate. A silicon layer is formed on the lower side between the pillar patterns. Ions are injected to the silicon layer. An ion implantation area(130) is formed by diffusing impurity ions injected to the silicon layer to the pillar pattern. The silicon layer is removed. Conductive materials are buried in the lower side of the pillar pattern.;COPYRIGHT KIPO 2012