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ORGANIC DIODES WITH IMPROVED ELECTRICAL PROPERTIES USING ELECTRICAL ANNEALING AND MANUFACTURING METHOD THEREOF

机译:利用电退火及其制造方法改善电性能的有机二极管

摘要

PURPOSE: organic diode and preparation method thereof provides and the larger electric current for improving electric current, being flowed through for a period of time by applying voltage to organic diode. ;CONSTITUTION: substrate, diode is sequentially formed in anode electrode (11), hole implant layer (12), active layer (13), electron injecting layer (14) and cathode electrode (15). Or substrate, the cathode electrode, the electron injecting layer, the active layer, in the hole implant layer, anode electrode is by succession in diode. It is ITO (indium tin oxide), AZO or metal and alloy made of anode electrode and cathode electrode. The hole implant layer and electron injecting layer are by thin metal, organic compound or oxide such as WO3, MoO3 and V2O3. Organic or organo-mineral complexing 30nm-300nm is used for active layer. ;The 2012 of copyright KIPO submissions
机译:用途:有机二极管及其制备方法提供了较大的电流以改善电流,通过向有机二极管施加电压使该电流流过一段时间。组成:衬底,二极管依次形成在阳极电极(11),空穴注入层(12),有源层(13),电子注入层(14)和阴极电极(15)中。或者衬底,阴极,电子注入层,有源层,在空穴注入层中,阳极通过二极管相继。它是ITO(铟锡氧化物),AZO或由阳极和阴极制成的金属和合金。空穴注入层和电子注入层由薄金属,有机化合物或诸如WO 3,MoO 3和V 2 O 3的氧化物形成。 30nm-300nm的有机或有机-矿物络合物用于活性层。 ; 2012年版权KIPO提交文件

著录项

  • 公开/公告号KR20120015193A

    专利类型

  • 公开/公告日2012-02-21

    原文格式PDF

  • 申请/专利权人 SNU R&DB FOUNDATION;

    申请/专利号KR20100077503

  • 发明设计人 KANG CHAN MO;LEE CHANG HEE;

    申请日2010-08-11

  • 分类号H01L51/56;

  • 国家 KR

  • 入库时间 2022-08-21 17:10:37

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