首页> 外国专利> METHOD FOR ELECTROMAGNETIC CASTING OF A SILICON INGOT, CAPABLE OF PREVENTING THE CONTAMINATION OF A MOLTEN SILICON DUE TO A METALLIC IMPURITY

METHOD FOR ELECTROMAGNETIC CASTING OF A SILICON INGOT, CAPABLE OF PREVENTING THE CONTAMINATION OF A MOLTEN SILICON DUE TO A METALLIC IMPURITY

机译:硅锭电磁铸造的方法,能够防止由于金属杂质而污染的硅

摘要

PURPOSE: A method for electromagnetic casting of a silicon ingot is provided to increase concentration of oxygen and carbon in molten silicon by maintaining the pressure of the chamber lower pressure than normal pressure.;CONSTITUTION: An inert gas inlet hole(5) guides an inert gas to a chamber. An inert gas guide tube is contacted to the inert gas inlet hole. A discharge pipe(16) is connected to the chamber to discharge ambient gas from the chamber. A pressure adjustment valve(19) is arranged between a discharge pipe and a vacuum pump(18). The pressure within the chamber is controlled by controlling the discharge amount of the ambient gas.;COPYRIGHT KIPO 2012
机译:用途:提供一种电磁铸造硅锭的方法,可通过将反应室的压力保持在低于常压的水平来增加熔融硅中的氧气和碳的浓度。组成:惰性气体入口孔(5)引导惰性气体气室。惰性气体导管与惰性气体入口孔接触。排放管(16)连接到腔室以从腔室排放环境气体。在排出管和真空泵(18)之间配置有压力调节阀(19)。腔室内的压力通过控制环境气体的排放量来控制。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20120026431A

    专利类型

  • 公开/公告日2012-03-19

    原文格式PDF

  • 申请/专利权人 SUMCO CORPORATION;

    申请/专利号KR20100128863

  • 申请日2010-12-16

  • 分类号C30B29/06;C30B11/00;C01B33/021;H01L21/02;

  • 国家 KR

  • 入库时间 2022-08-21 17:10:24

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