首页> 外国专利> CONTINUOUS CASTING APPARATUS OF A SILICON INGOT CAPABLE OF CONSECUTIVELY CASTING POLY-CRYSTAL SILICON USING AN ELECTROMAGNETIC CASTING METHOD AND A CONTINUOUS CASTING METHOD THEREOF

CONTINUOUS CASTING APPARATUS OF A SILICON INGOT CAPABLE OF CONSECUTIVELY CASTING POLY-CRYSTAL SILICON USING AN ELECTROMAGNETIC CASTING METHOD AND A CONTINUOUS CASTING METHOD THEREOF

机译:电磁铸造法连续铸造多晶硅的硅锭的连续铸造装置及其连续铸造方法

摘要

PURPOSE: A continuous casting apparatus of a silicon ingot and a continuous casting method thereof are provided to reduce contamination due to metallic impurities by suppressing degradation of localized lifetime.;CONSTITUTION: A cooled crucible(7) continuously casts poly-crystal silicon by melting a silicon raw material. A top plate(10) fixes the cooled crucible. An induction coil(8) heats the silicon raw material charged inside of the cooled crucible by performing an electromagnetic induction process. A separation material(17) separates the inside and the outside of the cooled crucible. The separation material is comprised of silicon, SiC, quartz, alumina, or carbon.;COPYRIGHT KIPO 2012
机译:目的:提供一种硅锭连续铸造设备及其连续铸造方法,以通过抑制局部寿命的降低来减少由于金属杂质引起的污染。;构成:冷却的坩埚(7)通过熔化硅来连续铸造多晶硅硅原料。顶板(10)固定冷却的坩埚。感应线圈(8)通过执行电磁感应过程来加热填充在冷却的坩埚内部的硅原料。分离材料(17)分离冷却坩埚的内部和外部。隔离材料由硅,SiC,石英,氧化铝或碳组成。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20120023487A

    专利类型

  • 公开/公告日2012-03-13

    原文格式PDF

  • 申请/专利权人 SUMCO CORPORATION;

    申请/专利号KR20100126875

  • 发明设计人 NISHIOKA KENICHI;KUSABA TATSUMI;

    申请日2010-12-13

  • 分类号C30B29/06;C30B11/00;C01B33/021;H01L21/02;

  • 国家 KR

  • 入库时间 2022-08-21 17:10:26

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