VERTICAL TYPE SEMICONDUCTOR DEVICE CAPABLE OF REDUCING OPERATING ERRORS ACCORDING TO MISALIGNMENT OF CONTACTS, AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A vertical type semiconductor device and a manufacturing method thereof are provided to reduce contact failure of a bit line contact by multiplying process margins when forming a bit line contact.;CONSTITUTION: A sacrificing film and inter-layer insulating films(106a-106f) are repeatedly laminated on a substrate(100). A semiconductor pattern(112) projected to the upper side of the inter-layer insulating film is formed inside a first opening part. A second opening part which exposes the substrate surface is formed between semiconductor patterns. A groove is formed by selectively eliminating the sacrificing film. A gate structure of multi-layer is formed within the groove. The gate structure is composed of a turner insulating layer(120a), a charge trapping layer(120b), a blocking dielectric layer(120c), and a control gate electrode(122).;COPYRIGHT KIPO 2012