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CHEMICAL-MECHANICAL POLISHING PAD WHICH INCLUDES A LIGHT STABILITY POLYMER END POINT DETECTION WINDOW USING LIGHT WITH A WAVELENGTH OF LESS THAN 400 NANOMETERS AND A POLISHING METHOD USING THE SAME
CHEMICAL-MECHANICAL POLISHING PAD WHICH INCLUDES A LIGHT STABILITY POLYMER END POINT DETECTION WINDOW USING LIGHT WITH A WAVELENGTH OF LESS THAN 400 NANOMETERS AND A POLISHING METHOD USING THE SAME
PURPOSE: A chemical-mechanical polishing pad which includes a light stability polymer end point detection window and a polishing method using the same are provided to analyze light projected on an optical sensor by passing the light stability polymer end point detection window after being reflected from the surface of a substrate, thereby easily determining a polishing end point.;CONSTITUTION: A chemical-mechanical polishing pad comprises a light stability polymer end point detection window and an abrasive layer which has a polishing surface. The light stability polymer end point detection window comprises an ultraviolet absorber and/or a hindered amine light stabilizer. The light stability polymer end point detection window includes light stabilizer components of 0.1 to 5 weight percent. The light stability polymer end point detection window has initial double transmittance of 15 percent or greater with respect to light with a wavelength of 380nm. The light stability polymer end point detection window has negative time dependent strain.;COPYRIGHT KIPO 2012
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