POROUS LOW-DIELECTRIC FILM MANUFACTURING METHOD WHICH FORMS A METAL WIRE INSIDE OF THE FILM AND A SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME

摘要

PURPOSE: A porous low-dielectric film manufacturing method and a semiconductor device manufacturing method using the same are provided to reduce an RC(Resistance Capacitance) delay by forming a metal wire with a conductive material which has a low dielectric constant.;CONSTITUTION: A low-dielectric film which includes a porogen material is formed on a substrate(S1). The porogen material of the low-dielectric film is removed by projecting first step ultraviolet(UV) rays(S2). A cross-linked porous low-dielectric film is formed by projecting second step UV rays(S3). A passivation process is performed on a porous wall by projecting third step UV rays(S4). A porous low-dielectric film is formed on the substrate(S5).;COPYRIGHT KIPO 2012