ZEOLITE SOL, METHOD OF MANUFACTURING THE SAME, COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD OF MANUFACTURING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE

摘要

PPROBLEM TO BE SOLVED: To provide zeolite sol capable of being formed into a thin film having optional thickness by a conventional method used for a semiconductor process and having excellent dielectric characteristic, adhesion property, uniformity of a coating film and mechanical strength and easily formed into the thin film and capable of forming a porous film, a composition for forming the film, the porous film and the method of manufacturing the same and a semiconductor device in which the poroius film is incorporated and is provided with high performance and high reliability. PSOLUTION: The zeolite sol is manufactured by hydrolyzing a silane compound expressed by a general formula, Si(ORSP1/SP)SB4/SB(where, in the formula, RSP1/SPrepresents a 1-4C linear or branched alkyl group and in the case of containing a plurality of RSP1/SPs, RSP1/SPs are independently the same as or different from each other) in the presence of a structure control agent and a basic catalyst and heat-treating at 75C. The porous film forming composition prepared by containing the zeolite sol in a conventional porous film forming coating liquid is used. PCOPYRIGHT: (C)2004,JPO