首页> 外国专利> MANUFACTURING METHOD OF A NANO-STRUCTURE AND AN ELECTRONIC DEVICE USING THEREOF CAPABLE OF IMPROVING LIGHT ABSORPTION EFFICIENCY OF A SOLAR BATTERY AND OPTICAL EXTRACTION EFFICIENCY OF A LIGHT EMITTING DIODE

MANUFACTURING METHOD OF A NANO-STRUCTURE AND AN ELECTRONIC DEVICE USING THEREOF CAPABLE OF IMPROVING LIGHT ABSORPTION EFFICIENCY OF A SOLAR BATTERY AND OPTICAL EXTRACTION EFFICIENCY OF A LIGHT EMITTING DIODE

机译:利用其能够提高太阳能电池的光吸收效率和发光二极管的光提取效率的纳米结构和电子设备的制造方法

摘要

PURPOSE: A manufacturing method of a nano-structure and an electronic device using thereof are provided to easily form a nano-cone by forming micro concave-convex structure on a substrate and form a desired shaped nano-structure at desired position on the substrate using a lithography process.;CONSTITUTION: A manufacturing method of a nano-structure comprises the following steps: forming micro concave-convex structure by etching surface of a substrate(100); evaporating metal catalyst(120) on the substrate in which the micro concave-convex structure(110) is formed; and forming a nano cone(130) by using a vapor-liquid-solid(VLS) method on the substrate in which the metallic catalyst is evaporated. A manufacturing method of an electronic device comprises the following steps: forming a p-n junction semiconductor layer by welding a p-type semiconductor layer and a n-type semiconductor layer; forming the micro concave-convex structure by etching at least one surfaces of the p-type semiconductor layer and the n-type semiconductor layer; evaporating a metallic catalyst on the semiconductor layer in which the micro concave-convex structure is formed; forming the nano cone using a vapor-liquid-solid(VLS) method on the semiconductor layer.;COPYRIGHT KIPO 2012
机译:用途:提供一种纳米结构的制造方法和使用其的电子设备,以通过在基板上形成微凹凸结构而容易地形成纳米锥,并使用该纳米结构在基板上的所需位置形成所需形状的纳米结构。组成:一种纳米结构的制造方法,包括以下步骤:通过蚀刻衬底的表面形成微凹凸结构(100);在形成有微凹凸结构(110)的基板上蒸发金属催化剂(120)。通过汽-液-固(VLS)法在蒸镀金属催化剂的基材上形成纳米锥(130)。电子设备的制造方法包括以下步骤:通过焊接p型半导体层和n型半导体层形成p-n结半导体层;通过蚀刻p型半导体层和n型半导体层的至少一个表面来形成微凹凸结构;在形成有微凹凸结构的半导体层上蒸发金属催化剂。使用汽-液-固(VLS)方法在半导体层上形成纳米锥。; COPYRIGHT KIPO 2012

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