首页>
外国专利>
STABLE P-TYPE SEMICONDUCTING BEHAVIOR IN LI AND NI CODOPED ZNO
STABLE P-TYPE SEMICONDUCTING BEHAVIOR IN LI AND NI CODOPED ZNO
展开▼
机译:Li和Ni掺杂ZNO中的稳定P型半导电行为
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method is provided for growing a stable p-type ZnO thin film with low resistivity and high mobility. The method includes providing an n-type Li—Ni co-doped ZnO target in a chamber, providing a substrate in the chamber, and ablating the target to form the thin film on the substrate.
展开▼