STABLE P-TYPE SEMICONDUCTING BEHAVIOR IN LI AND NI CODOPED ZNO

摘要

low resistivity (resistivity) and high mobility (mobility) having a stable p-type ZnO thin film growth of the method is provided for . The method includes a target flux to form a thin film on the steps , and the substrate in the step of providing a substrate , a chamber to provide a ZnO target doped with an n-type Li-Ni in the chamber . ;