首页> 外国专利> FILM FORMING APPARATUS CAPABLE OF CREATING A REMOVABLE MOLYBDENUM LAYER IN A PATTERNING PROCESS USING A LASER SCRIBE METHOD, A FILM-FORMED SUBSTRATE MANUFACTURING METHOD, AND A FILM-FORMED SUBSTRATE

FILM FORMING APPARATUS CAPABLE OF CREATING A REMOVABLE MOLYBDENUM LAYER IN A PATTERNING PROCESS USING A LASER SCRIBE METHOD, A FILM-FORMED SUBSTRATE MANUFACTURING METHOD, AND A FILM-FORMED SUBSTRATE

机译:使用激光划痕法,成膜的基质制造方法和成膜的基质能够在制版过程中形成可移除的钼层的成膜设备

摘要

PURPOSE: A film forming apparatus, a film-formed substrate manufacturing method, and a film-formed substrate are provided to simplify a gas feed mechanism by forming pressure gradient using a single gas inlet part.;CONSTITUTION: A film forming apparatus(10) comprises film forming chambers(11A,11B) in which a material for forming a molybdenum layer is placed and a molybdenum layer is formed on a substrate and a pressure gradient forming unit which leads inert gas into the film forming chambers and forms pressure gradient for reducing the pressure of inert gas in the film forming chambers from a first pressure state to a second pressure state lower than the first pressure state. In the film forming chambers, a first film is formed at the first pressure state and a second film is formed after the pressure of inert gas is lowered to the second pressure state.;COPYRIGHT KIPO 2012
机译:目的:提供一种成膜设备,一种成膜基板的制造方法和一种成膜基板,以通过使用单个进气口形成压力梯度来简化气体输送机制。;构成:成膜设备(10)包括:成膜室(11A,11B),其内放置用于形成钼层的材料,并且在基板上形成钼层;以及压力梯度形成单元,其将惰性气体引入成膜室并形成用于降低压力的压力梯度。成膜室中的惰性气体的压力从第一压力状态变为低于第一压力状态的第二压力状态。在成膜室中,第一膜在第一压力状态下形成,第二膜在惰性气体的压力降至第二压力状态后形成。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20120060755A

    专利类型

  • 公开/公告日2012-06-12

    原文格式PDF

  • 申请/专利权人 SUMITOMO HEAVY INDUSTRIES LTD.;

    申请/专利号KR20110127494

  • 发明设计人 IWATA HIROSHI;

    申请日2011-12-01

  • 分类号C23C14/14;C23C14/34;

  • 国家 KR

  • 入库时间 2022-08-21 17:09:53

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