INDIUM ZINC OXIDE SPUTTERING TARGET FOR IMPROVING THE ETCHING PROPERTY OF A TRANSPARENT FILM FORMED FROM THE SAME AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An indium zinc oxide sputtering target and a method for manufacturing thereof are provided to obtain a sputtering target with a low resistance by employing titanium oxide as dopant.;CONSTITUTION: An indium zinc oxide sputtering target comprises indium tin oxide, zinc oxide, and titanium oxide. The titanium oxide is TiO2-a employed as dopant instead of existing TiO2, where a is 0.5-1. The TiO2-a dopant improves the degree of freedom in the crystalline of a transparent film formed from the indium zinc oxide sputtering target, thereby enhancing the etching property of the transparent film.;COPYRIGHT KIPO 2012