METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE CAPABLE OF IMPROVING PROCESS MARGINS WHEN FORMING A CONTACT HOLE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to overcome alignment margin problems by forming a contact with self-aligned method by using a hard mask.;CONSTITUTION: A first hard mask(153a) is formed on a gate structure. A spacer is formed at the side wall of the gate structure. A first contact hole(170a) is formed by partly etching a first inter layer dielectric by using the first hard mask as an etching mask. The first contact hole exposes the upper side of a substrate. A metal silicide pattern(159) is formed at the upper side of the substrate exposed by the first contact hole. A plug which is electrically connected with the metal silicide pattern is formed. A gate insulating layer is formed on the first inter layer dielectric and the spacer.;COPYRIGHT KIPO 2012