PMOS(P-CHANNEL METAL OXIDE SEMICONDUCTOR) TRANSISTOR RESISTANCE FOR REDUCING THE CHANGE OF A RESISTANCE CHARACTERISTIC ACCORDING TO A SIZE OF APPLIED VOLTAGES

摘要

PURPOSE: A PMOS(P-channel Metal Oxide Semiconductor) transistor resistance is provided to regularly maintain a resistance value regardless of a size of an applied voltage by using a pair of PMOS transistors which are structurally symmetry.;CONSTITUTION: A pair of PMOSes(P-channel Metal-Oxide Semiconductor)(210) includes a first PMOS transistor(211) and a second PMOS transistor(212). A switching unit(220) determines a negative feedback state by comparing a voltage in a first node with a voltage in a second node. The switching unit comprises a comparator(221), a switch(222), and a buffer(223). A negative feedback unit(230) controls source-gate voltages of the first PMOS and the second PMOS transistors through negative feedback by receiving an output voltage from the switching unit. The negative feedback unit comprises reference resistance(231), a third PMOS transistor(232), first and second current sources(233,234), and an operational amplifier(235).;COPYRIGHT KIPO 2012