首页> 外国专利> INTERNAL VOLTAGE GENERATING CIRCUIT INCLUDING AN INTERNAL VOLTAGE GENERATING UNIT AND A SEMICONDUCTOR MEMORY DEVICE

INTERNAL VOLTAGE GENERATING CIRCUIT INCLUDING AN INTERNAL VOLTAGE GENERATING UNIT AND A SEMICONDUCTOR MEMORY DEVICE

机译:内部电压发生电路,包括内部电压发生单元和半导体存储器

摘要

PURPOSE: An internal voltage generating circuit and a semiconductor memory device are provided to drive an internal voltage by securing sufficient driving power in a read or write operation.;CONSTITUTION: A first internal voltage generating unit(1) generates an internal voltage in an active operation. A second internal voltage generating unit(2) generates the internal voltage when the active operation is performed and an operation of a column path for a read operation or a write operation is started. A distribution voltage generating unit generates a distribution voltage by distributing the internal voltage. A comparison signal generating unit generates a comparison signal by comparing a distribution voltage with a reference voltage in response to an active signal enabled in an active operation.;COPYRIGHT KIPO 2012
机译:目的:提供内部电压产生电路和半导体存储器件,以通过在读取或写入操作中确保足够的驱动功率来驱动内部电压;组成:第一内部电压产生单元(1)在有源器件中产生内部电压操作。当执行有源操作并且开始用于读取操作或写入操作的列路径的操作时,第二内部电压产生单元(2)产生内部电压。分配电压产生单元通过分配内部电压来产生分配电压。比较信号生成单元响应于在主动操作中启用的主动信号,通过将分配电压与参考电压进行比较来生成比较信号。COPYRIGHTKIPO 2012

著录项

  • 公开/公告号KR20120075985A

    专利类型

  • 公开/公告日2012-07-09

    原文格式PDF

  • 申请/专利权人 SK HYNIX INC.;

    申请/专利号KR20100137935

  • 发明设计人 KIM JAE HOON;

    申请日2010-12-29

  • 分类号G11C5/14;G11C7/10;

  • 国家 KR

  • 入库时间 2022-08-21 17:09:37

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