MANUFACTURING METHOD OF A LIGHT EMITTING DIODE CAPABLE OF IMPROVING THE MANAGING PERFORMANCE OF A PROCESSING SYSTEM AND THE LIGHT EMITTING DIODE MANUFACTURED BY THE SAME

摘要

PURPOSE: A manufacturing method of a light emitting diode and the light emitting diode manufactured by the same are provided to minimize contamination on a semiconductor layer by growing the semiconductor layer by using two ore more reaction chambers.;CONSTITUTION: A first conductivity type nitride semiconductor layer(102) and an undoped nitride semiconductor layer(103) are grown on a substrate. The substrate is transferred to a second reaction chamber. An additional first conductivity type nitride semiconductor layer(104) is grown on the undoped nitride semiconductor layer. An active layer(105) is grown on the additional first conductivity type nitride semiconductor layer. A second conductive type nitride semiconductor layer(106) is grown on the active layer.;COPYRIGHT KIPO 2012