LIGHT EMITTING DIODE WITH HIGH EFFICIENCY USING A SURFACE PLASMON RESONANT PHENOMENON

摘要

PURPOSE: A light emitting diode with high efficiency is provided to improve current spreading by inducing the scattering and diffraction of light through a nano metal pattern.;CONSTITUTION: A semiconductor layer includes an n type semiconductor layer, an active layer, and a p type semiconductor layer. The n type semiconductor layer, the active layer, and the p type semiconductor layer are successively laminated on the substrate. A nano metal pattern(150) is formed on the p type semiconductor layer with a repetitive strip pattern. A transparent electrode(480) is formed on the p type semiconductor layer.;COPYRIGHT KIPO 2012