首页> 外国专利> SEMICONDUCTOR LIGHT EMITTING DEVICE CAPABLE OF INCREASING THE EFFICIENCY OF EXTRACTING LIGHT THROUGH SURFACE PLASMON RESONANCE PHENOMENON

SEMICONDUCTOR LIGHT EMITTING DEVICE CAPABLE OF INCREASING THE EFFICIENCY OF EXTRACTING LIGHT THROUGH SURFACE PLASMON RESONANCE PHENOMENON

机译:具有提高通过表面等离振子现象提取光的效率的半导体发光装置

摘要

PURPOSE: A semiconductor light emitting device is provided to improve the optical confinement factor of an active layer between metal layers by using surface plasmon resonance which is generated from metal layer.;CONSTITUTION: In a semiconductor light emitting device, a second conductive layer(120) is located on a first conductive semiconductor layer(110). A buffer layer is formed between a substrate(150) and the first conductive layer. An active layer(130) generates light through the recombination of holes and electronics. At least two metal layer(140) penetrates through the active layer up and down. The first and second conductive layers and the active layer are made of a compound for generating light through the recombination of the electronics and holes.;COPYRIGHT KIPO 2011
机译:目的:提供一种半导体发光器件,以利用金属层产生的表面等离振子共振来提高金属层之间有源层的光学限制因子。组成:在半导体发光器件中,第二导电层(120) )位于第一导电半导体层(110)上。在衬底(150)和第一导电层之间形成缓冲层。有源层(130)通过空穴和电子的复合产生光。至少两个金属层(140)上下穿透有源层。第一导电层和第二导电层以及有源层由化合物制成,该化合物用于通过电子元件和空穴的复合产生光。; COPYRIGHT KIPO 2011

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