首页> 外国专利> NON-HALOGENATED ETCHANT FOR ETCHING AN INDIUM OXIDE LAYER AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE NON-HALOGENATED ETCHANT

NON-HALOGENATED ETCHANT FOR ETCHING AN INDIUM OXIDE LAYER AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE NON-HALOGENATED ETCHANT

机译:用于蚀刻氧化铟层的无卤化防腐剂以及使用该无卤化防腐剂制造显示基质的方法

摘要

PURPOSE: A non-halogen etchant of an indium oxide layer is provided to minimize damages to a lower during process etching an indium oxide layer which is an upper layer even if a copper layer or an aluminum layer is formed in the lower layer of the indium oxide layer. CONSTITUTION: A non-halogen etchant of an indium oxide layer comprises nitric acid, sulfuric acid, corrosion inhibitor comprising ammonium(NH4^+), a cyclic amine compound, and water. A manufacturing method of a display substrate comprises: a step of forming a switching element(SW) comprising a gate electrode(GE), a source electrode(SE), and a drain electrode(DE) on a substrate(110); a step of forming an indium oxide layer(INL1) on a substrate on which the switching element is formed; a step of forming a first pixel electrode(PE1), which contacts to the drain electrode by patterning the indium oxide layer by using the non-halogen etchant.
机译:用途:提供氧化铟层的非卤素刻蚀剂,即使在铟的下层中形成铜层或铝层,也可以在蚀刻作为上层的氧化铟层的过程中将对下层的损害最小化氧化层。组成:氧化铟层的非卤素刻蚀剂包括硝酸,硫酸,包含铵(NH4 ^ +)的缓蚀剂,环胺化合物和水。显示基板的制造方法包括:在基板(110)上形成包括栅电极(GE),源电极(SE)和漏电极(DE)的开关元件(SW)的步骤;在形成有开关元件的基板上形成氧化铟层(INL1)的步骤;形成第一像素电极(PE1)的步骤,该第一像素电极通过使用无卤素蚀刻剂对氧化铟层进行构图而与漏极接触。

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