首页> 外国专利> BACK BIAS VOLTAGE GENERATOR OF A SEMICONDUCTOR DEVICE TO REDUCE THE DUMPING OF A BACK BIAS VOLTAGE CURVE

BACK BIAS VOLTAGE GENERATOR OF A SEMICONDUCTOR DEVICE TO REDUCE THE DUMPING OF A BACK BIAS VOLTAGE CURVE

机译:半导体装置的反向偏置电压发生器,以减少反向偏置电压曲线的倾覆

摘要

PURPOSE: A back bias voltage generator of a semiconductor device is provided to secure reliability by making a back bias voltage with a negative value which is approximate to a back bias voltage target level in an initial power-up process.;CONSTITUTION: A first level detector unit(100) activates a first detection signal until an applied external voltage reaches a preset level. A second level detector unit(200) detects a back bias voltage and activates a second detection signal according to the detection result. An enable signal generating unit(300) activates a pump enable signal if one of the first and second detection signals is activated. A charge pump(400) pumps the back bias voltage according to the pump enable signal.;COPYRIGHT KIPO 2013;[Reference numerals] (100) First level detector unit; (200) Second level detector unit; (400) Charge pump
机译:目的:提供一种半导体器件的反向偏置电压发生器,以通过在初始上电过程中使反向偏置电压的负值接近反向偏置电压目标电平来确保可靠性。构成:第一级检测器单元(100)激活第一检测信号,直到施加的外部电压达到预设水平。第二电平检测器单元(200)检测反向偏置电压,并根据检测结果激活第二检测信号。如果第一和第二检测信号之一被激活,则使能信号生成单元(300)激活泵使能信号。电荷泵(400)根据泵使能信号泵送反向偏置电压。; COPYRIGHT KIPO 2013; [参考数字](100)第一电平检测器单元; (200)二级检测器单元; (400)补油泵

著录项

  • 公开/公告号KR20120098318A

    专利类型

  • 公开/公告日2012-09-05

    原文格式PDF

  • 申请/专利权人 SK HYNIX INC.;

    申请/专利号KR20110018185

  • 发明设计人 OK SEUNG HAN;

    申请日2011-02-28

  • 分类号G11C5/14;

  • 国家 KR

  • 入库时间 2022-08-21 17:09:14

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