首页> 外国专利> SUBSTRATE FOR GROWING A COMPOUND SEMICONDUCTOR CAPABLE OF IMPROVING EXTERNAL QUANTUM EFFICIENCY AND INTERNAL QUANTUM EFFICIENCY AND A LIGHT EMITTING DEVICE FOR A COMPOUND SEMICONDUCTOR HAVING THE SAME

SUBSTRATE FOR GROWING A COMPOUND SEMICONDUCTOR CAPABLE OF IMPROVING EXTERNAL QUANTUM EFFICIENCY AND INTERNAL QUANTUM EFFICIENCY AND A LIGHT EMITTING DEVICE FOR A COMPOUND SEMICONDUCTOR HAVING THE SAME

机译:用于生长能够提高外部量子效率和内部量子效率的复合半导体的基质,以及具有相同功能的复合半导体的发光装置

摘要

PURPOSE: A substrate for growing a compound semiconductor and a light emitting device for a compound semiconductor having the same are provided to improve a scattering effect of light by protrusions by forming relatively a large number of protrusions per standard area on a growth plane of a substrate.;CONSTITUTION: A substrate(110) for compound semiconductor growth is made of sapphire. The substrate for compound semiconductor growth comprises a growth substrate(111) and a plurality of protrusions(113). The growth substrate includes a growth plane on which a compound semiconductor is grown up. The plurality of protrusions is formed by a photo lithography process of the substrate for compound semiconductor growth. The plurality of protrusions is formed on the growth plane to have relatively high density.;COPYRIGHT KIPO 2013
机译:用途:提供了一种用于生长化合物半导体的基板以及具有该基板的化合物半导体的发光器件,以通过在基板的生长平面上每标准面积上形成相对大量的突起来改善由突起引起的光的散射效果。组成:用于化合物半导体生长的衬底(110)由蓝宝石制成。用于化合物半导体生长的衬底包括生长衬底(111)和多个突起(113)。生长衬底包括在其上生长化合物半导体的生长平面。通过用于化合物半导体生长的基板的光刻工艺形成多个突起。多个突起形成在生长平面上以具有较高的密度。; COPYRIGHT KIPO 2013

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号