SEMICONDUCTOR LIGHT EMITTING DEVICE CAPABLE OF IMPROVING THE EFFICIENCY OF INTERNAL QUANTUM EFFICIENCY OF A SUB LIGHT EMITTING DEVICE

摘要

PURPOSE: A semiconductor light emitting device is provided to improve the luminous efficiency of a sub light emitting device by using surface plasmon resonance.;CONSTITUTION: In a semiconductor light emitting device, first and second active layers(100b,120b) generates a light through the recombination of electron and a hole. First and second active layers(110b,120b) generate light through the recombination of electrons and hole. A first sub light emitting device(110) includes a plurality of first semiconductors(110a,110c) having a first active layer. A second sub light emitting device(120) includes a plurality of second semiconductor layers(120a,120c) having a second active layer. A first insulation layer(130) is arranged between the first sub light emitting device and the second sub light emitting device.;COPYRIGHT KIPO 2011