MANUFACTURING METHOD OF A SILICON WIRE ARRAY BY AN ELECTROCHEMICAL ETCHING METHOD

摘要

PURPOSE: A manufacturing method of a silicon wire array by an electrochemical etching method is provided to prevent the contamination of a device by excluding anisotropic etching solution.;CONSTITUTION: An etching mask is patterned on the surface of a silicon substrate. The surface of the silicon substrate is electrochemically etched. The electrochemical etching forms an etching area by applying an electric field having a first current density. The etching area includes micro openings. The etching area is etched by applying an electric field having a second current density higher than the first current density.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Initial washing; (BB) Photolithography; (CC) BOE(natural oxide film removal); (DD) Al deposition; (EE) Electrochemical etching(first current density); (FF) Etching area; (GG) Micro opening; (HH) Electrochemical etching(second current density)