NITRIDE BASED LIGHT EMITTING DEVICE WITH HIGH LUMINOUS EFFICIENCY USING IMPURITIES CAPABLE OF IMPROVING LIGHT EXTRACTION EFFICIENCY

摘要

PURPOSE: A nitride based light emitting device with high luminous efficiency using impurities is provided to remove yellow luminescence by mixing impurities with a bottom nitride layer of a light emitting device.;CONSTITUTION: A bottom nitride layer(210) is formed on a substrate. A first conductive nitride layer(220) is formed on the upper side of the bottom nitride layer. An active layer(230) is formed on the upper side of the first conductive nitride layer. A second conductive nitride layer(240) is formed on the upper side of the active layer. A first electrode is contacted with the first conductive nitride layer.;COPYRIGHT KIPO 2013;[Reference numerals] (200) Substrate