首页> 外国专利> LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LIGHT EMITTING DEVICE PACKAGE CAPABLE OF IMPROVING LUMINOUS EFFICIENCY AND LIGHT EXTRACTION EFFICIENCY

LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LIGHT EMITTING DEVICE PACKAGE CAPABLE OF IMPROVING LUMINOUS EFFICIENCY AND LIGHT EXTRACTION EFFICIENCY

机译:能够提高发光效率和光提取效率的发光装置,其制造方法以及发光装置封装

摘要

PURPOSE: A light emitting device, a manufacturing method thereof, and a light emitting device package are provided to improve the current spreading of the light emitting device by forming a current blocking layer made of light transmitting materials to be overlapped with a part of an electrode.;CONSTITUTION: A light emitting structure(145) comprises a first conductive semiconductor layer(130), an active layer(140), and a second conductive semiconductor layer(150). An electrode(170) is formed on the first conductive semiconductor layer. A current blocking layer(158) is formed under the second conductive semiconductor layer. An ohmic pattern layer(155) is formed under the second conductive semiconductor layer and forms an ohmic contact with the second conductive semiconductor layer. A reflection layer(156) is formed under the light emitting structure, the current blocking layer, and the ohmic pattern layer.;COPYRIGHT KIPO 2011
机译:目的:提供一种发光器件,其制造方法和发光器件封装,以通过形成由透光材料制成的电流阻挡层与电极的一部分重叠来改善发光器件的电流扩散。组成:发光结构(145)包括第一导电半导体层(130),有源层(140)和第二导电半导体层(150)。在第一导电半导体层上形成电极(170)。在第二导电半导体层下方形成电流阻挡层(158)。欧姆图案层(155)形成在第二导电半导体层下方,并且与第二导电半导体层形成欧姆接触。在发光结构,电流阻挡层和欧姆图案层下面形成反射层(156)。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110092728A

    专利类型

  • 公开/公告日2011-08-18

    原文格式PDF

  • 申请/专利权人 LG INNOTEK CO. LTD.;

    申请/专利号KR20100012317

  • 发明设计人 CHO HYUN KYEONG;

    申请日2010-02-10

  • 分类号H01L33/14;H01L33/10;

  • 国家 KR

  • 入库时间 2022-08-21 17:51:18

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