NITRIDE EPITAXIAL WAFER FOR A LIGHT EMITTING DEVICE, A MANUFACTURING METHOD THEREOF, AND A METHOD FOR MANUFACTURING NITRIDE LIGHT EMITTING DEVICE USING THE SAME CAPABLE OF IMPROVING CRYSTAL QUALITY AND LIGHT EXTRACTION EFFICIENCY

摘要

PURPOSE: A nitride epitaxial wafer for a light emitting device, a manufacturing method thereof, and a method for manufacturing a nitride light emitting device are provided to efficiently discharge heat by forming an uneven part on a substrate.;CONSTITUTION: A nitride epitaxial layer(30) is formed on a silicon wafer(10) and includes a first conductive nitride semiconductor layer(32), an active layer(35), and a second conductive nitride semiconductor layer(37). The nitride epitaxial layer includes an inner region(30A) and an edge region(30B). The crack distribution density of the inner region is larger than the crack distribution density of the edge region. The edge region of the nitride epitaxial layer is removed.;COPYRIGHT KIPO 2012