首页> 外国专利> TESTING CIRCUIT AND A TESTING METHOD OF A SEMICONDUCTOR INTEGRATED CIRCUIT CAPABLE OF ACCURATELY TESTING A DEGRADED CHIP

TESTING CIRCUIT AND A TESTING METHOD OF A SEMICONDUCTOR INTEGRATED CIRCUIT CAPABLE OF ACCURATELY TESTING A DEGRADED CHIP

机译:能够精确测试降级芯片的半导体集成电路的测试电路和测试方法

摘要

PURPOSE: A testing circuit and a testing method of a semiconductor integrated circuit are provided to reduce manufacturing costs and to improve manufacturing yield rate by testing a penetration via formed on a single chip and selecting a degraded chip before packaging.;CONSTITUTION: A testing circuit(1) of a semiconductor IC(integrated circuit) comprises a penetration via(100), a voltage driving part(200), and a determining part(300). The penetration via receives input voltage. The voltage driving part is connected to the penetration via and receives the input voltage. The voltage driving part responds a test control signal and changes the level of the input voltage and creates test voltage. The determining part outputs a result signal by comparing the input voltage with the test voltage.;COPYRIGHT KIPO 2013;[Reference numerals] (210) Pull-up part; (220) Pull-down part; (300) Determining part; (400) Buffer part; (500) Output part
机译:目的:提供一种半导体集成电路的测试电路和测试方法,以通过测试在单个芯片上形成的穿透通孔并在封装前选择退化的芯片来降低制造成本并提高制造良率。半导体IC(集成电路)的(1)包括穿透通孔(100),电压驱动部分(200)和确定部分(300)。穿透孔接收输入电压。电压驱动部分连接到穿通孔并接收输入电压。电压驱动部分响应测试控制信号并改变输入电压的电平并产生测试电压。确定部分通过将输入电压与测试电压进行比较来输出结果信号。COPYRIGHT KIPO 2013; [210]上拉部分; (220)下拉部分; (300)确定部分; (400)缓冲部分; (500)输出部分

著录项

  • 公开/公告号KR20120121591A

    专利类型

  • 公开/公告日2012-11-06

    原文格式PDF

  • 申请/专利权人 SK HYNIX INC.;

    申请/专利号KR20110039472

  • 发明设计人 SHIN SANG HOON;LEE TAE YONG;

    申请日2011-04-27

  • 分类号G01R31/28;H01L21/66;G01R31/3183;

  • 国家 KR

  • 入库时间 2022-08-21 17:08:53

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