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CMOS POWER AMPLIFIER AND TEMPERATURE COMPENSATION CIRCUIT OF THE SAME

机译:相同的CMOS功率放大器和温度补偿电路

摘要

The present invention, Mr. Morse relates to a power amplifier, supplies the gate bias voltage of the power amplifier circuit bias circuitry; Bias detector to determine the class type of the power amplification circuit in accordance with the gate bias voltage; A temperature detector that detects a temperature proportional voltage proportional to the ambient temperature; In the class type is determined by the bias detector, temperature compensation controller for generating a compensation control value according to the temperature proportional voltage; And includes a transformation that provides the bias control circuit to convert the compensation value of the temperature compensation controller to control the linear bias value, the bias circuit is characterized in that to compensate for the gate bias voltage in accordance with said bias control value conversion portion The. ;
机译:Morse先生,本发明涉及一种功率放大器,其提供功率放大器电路偏置电路的栅极偏置电压。偏置检测器根据栅极偏置电压确定功率放大电路的类别类型;温度检测器,检测与环境温度成正比的温度比例电压;在类别类型中,由偏置检测器确定,温度补偿控制器根据温度比例电压产生补偿控制值;并且包括一种提供偏置控制电路以转换温度补偿控制器的补偿值以控制线性偏置值的变换,该偏置电路的特征在于,根据所述偏置控制值转换部分来补偿栅极偏置电压。的。 ;

著录项

  • 公开/公告号KR101101545B1

    专利类型

  • 公开/公告日2012-01-02

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20100055370

  • 发明设计人 조병학;유현환;나유삼;김유환;

    申请日2010-06-11

  • 分类号H03F1/30;H03F3/20;

  • 国家 KR

  • 入库时间 2022-08-21 17:08:48

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