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A 40-nm CMOS E-Band 4-Way Power Amplifier With Neutralized Bootstrapped Cascode Amplifier and Optimum Passive Circuits

机译:具有中性自举共源共栅放大器和最佳无源电路的40nm CMOS E波段4路功率放大器

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摘要

This paper reports a fully integrated 40-nm CMOS power amplifier (PA) for E-band applications. A neutralized bootstrapped cascode amplifier (NBCA) topology is proposed to enhance the power gain and output power at millimeter wave (mm-Wave) frequencies while maintaining the stability. A broadband 4-way differential parallel-series power combiner is employed to further increase the output power. Besides, both interstage and input passive networks are optimized to improve the bandwidth and common-mode stability. Occupying 0.25 , the proposed PA achieves a measured output power of 22.6 dBm with 19.3% peak power-added efficiency . The 2-stage PA has a measured power gain of 25.3 dB.
机译:本文报告了用于E波段应用的完全集成的40 nm CMOS功率放大器(PA)。提出了一种中和的自举共源共源共栅放大器(NBCA)拓扑,以增强毫米波(mm-Wave)频率下的功率增益和输出功率。采用宽带4路差分并联串联功率组合器进一步提高输出功率。此外,级间和输入无源网络均经过优化,以提高带宽和共模稳定性。提议的功率放大器占0.25,可实现22.6 dBm的测量输出功率,峰值功率附加效率为19.3%。 2级功率放大器的测量功率增益为25.3 dB。

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