METHOD FOR INTEGRATING METALS HAVING DIFFERENT WORK FUNCTIONS TO FORM CMOS GATES HAVING A HIGH-K DIELECTRIC AND RELATED STRUCTURE

摘要

According to one exemplary embodiment, the dual metal gate NMOS 226 and PMOS gate 228 to form the substrate 202, an integrated method for the first metal layer 206 and the second metal layer 208 on the step of depositing a dielectric layer 204 over the NMOS (210) and PMOS region 212 of the substrate (150) a. The method further comprises a step 150 of depositing a first metal layer 206 on the dielectric layer (204). The present method may include a step 150 of depositing a second metal layer 208 on the first metal layer (206) further. The method and converted to the step of injecting nitrogen in the NMOS region 210, 152 and, the metal oxide layer, a first portion of the first metal layer 206, 220 of the substrate 202, a first metal layer (206 a second part further step 154, converting the metal nitride layer 218 a). The method as NMOS gate 226 and PMOS gate (228) forming (156), NMOS gate 226 is a segment (segment) (234) of the metal nitride layer 218 and PMOS gate (228 ) further comprises the step (156) comprising a segment (242) of the metal oxide layer (220).