SEMICONDUCTOR STRUCTURE WITH DIFFERENT LATTICE CONSTANT MATERIALS AND METHOD FOR FORMING THE SAME

摘要

semiconductor structure 10 includes a substrate having a first semiconductor material having a first lattice constant Relaxing includes. The semiconductor device layer 34 is located over the substrate, the semiconductor device layer comprises a semiconductor material (22) having a first relaxing the second lattice constant different from the second lattice constant. In addition, the dielectric layer is inserted between the substrate and the semiconductor device layer, the dielectric layer comprises a first lattice constant and a second dielectric layer disposed in the transition area programmed for a transition between the lattice constant. Programmed transition region comprises a plurality of layers, adjacent layers of the plurality of layers having a different lattice constant, a layer of the adjacent layers having a first thickness greater than the first critical thickness necessary to form a defect, the adjacent another layer of the layer has a second thickness that does not exceed a second critical thickness. Each of the plurality of adjacent layers of the layer move to the edge of the transition zone is programmed to form a defect in the interface to facilitate the transition zone and ends on the edges. In addition, a method of manufacturing the same are also disclosed.