High Quality Non-polar/Semi-polar Semiconductor Device on Prominence and Depression Patterned Substrate and Manufacturing Method thereof

摘要

The present invention is to form a non-polar / semi-polar nitride semiconductor crystal nitride semiconductor layer grown on a sapphire crystal face possible removing the piezoelectric phenomena which occur in the active layer of the nitride semiconductor polarity (piezoelectric effect), and the internal quantum etching the sapphire substrate by forming a textured structure pattern in a template (template) layer thereon to reduce the defect density of the semiconductor device and the light extraction efficiency that improves the efficiency of high quality non-polar / semi-polar semiconductor devices and to a method of manufacturing the same. In a method of manufacturing a semiconductor device forming a template layer and the semiconductor device structure on a sapphire substrate having a crystal plane for the growth of a non-polar or semi-polar nitride semiconductor layer according to the present invention, etching the sapphire substrate by forming a textured structure pattern Then, the concave-convex structure pattern discloses a method of forming the template layer comprising a nitride semiconductor layer and the GaN layer on the sapphire substrate, which is formed.