MULTI-STATE NON-VOLATILE INTEGRATED CIRCUIT MEMORY SYSTEMS THAT EMPLOY DIELECTRIC STORAGE ELEMENTS

摘要

Non-volatile memory cells store the charge levels corresponding to the data to be stored in the dielectric material storage device 107 sandwiches between the memory cell control gate (109, 110, 111) on the channel region and the semiconductor substrate surface 101. At least two memory states are provided by one of the two or more levels of charge stored in the common area of ​​the dielectric material. One or more such common area is included in each cell. In one form, two such regions are provided on the contact source and drain diffusions (103, 104, 105) in the cell containing a select transistor in between them. In yet another shape, NAND array of memory cell string and stores the charge in the region of the dielectric layer sandwiched between the word line 110 and the semiconductor substrate 100. ; Non-volatile memory, the control gate dielectric