Thin Film Transistor Substrate of Fringe Field Switching Type And Fabricating Method Thereof, Liquid Crystal Display Panel Using The Same And Fabricating Method Thereof

摘要

The present invention is to provide a thin film transistor substrate and a manufacturing method of a fringe field switching type that can simplify the process and the liquid crystal panel and a manufacturing method using the same. ; A thin film transistor substrate of the present invention, a gate line formed on the substrate; Data lines defining a pixel area are cross-sandwiching the gate line and the gate insulating film and; And a thin film transistor including a gate electrode, a source electrode connected to the data line, a drain electrode facing the source electrode, a semiconductor layer that forms a channel between the source electrode and the drain electrode connected to the gate lines; A common line in parallel with the gate lines formed on the substrate; A common electrode formed in the pixel region are connected with said common lines; Comprising a transparent conductive film for the pixel electrode formed on the gate insulating film of the pixel region; The drain electrode is connected are superimposed over the pixel electrode; The semiconductor layer is characterized in that it is removed from the overlapping portion of the transparent conductive film.