METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE OF WIDEBAND WILKINSON POWER DIVIDER

摘要

PURPOSE: A method for manufacturing a semiconductor device of a broadband Wilkinson power divider is provided to prevent oxidation by forming a dual layer of a first metal layer and a second metal layer made of Cu and Au. CONSTITUTION: A first insulation layer(210) is coated on a semiconductor substrate(200). A thin film resistor is formed on the first insulation layer. A first metal layer is plated and deposited. A second insulation layer is etched by coating the second insulation layer on the first metal layer. A seed metal layer is sputtered and deposited. A second metal layer is plated and deposited. A third insulation layer is coated on the deposited second metal layer.