SAPPHIRE SUBSTRATE, NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT USING THE SAPPHIRE SUBSTRATE, AND METHOD FOR MANUFACTURING THE NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT

摘要

The decision by the vapor phase method realizes inexpensive substrates that can be grown m-plane. In the sapphire substrate 1, such as in GsN crystal (2) to the growth Sikkim, as a growth surface (3) that is a template of the crystal (2), determined beforehand by the grinding process from, m plane 4 smile created an inclined angle and off by respective surfaces, and the step of the stepped shape having a step board (5) and terraces (6). Therefore, as is also conventional with the m-plane (nonpolar plane) GaN film that does not create inexpensive sapphire substrate 1 as the substrate for crystal growth, a favorable vapor-phase method on the device created, a from each step (5) with the side surface on which terrace (6) c-axis was grown on the surface of the m-plane terrace 6 is preferred to grow the GaN single crystal grown epitaxially on the opposite side so that, before long, each step (5) a simple integrated (fused) to, threading dislocation can be prepared by the device substrate of GaN single crystal is small. In addition, it is possible to eliminate the influence of the piezoelectric field by using the m-plane.