Thyristors self-defense against BREAKDOWN

摘要

The invention relates to power semiconductor devices, namely to the design of semiconductor devices based on semiconductor structures with alternating layers of p- and n-type conductivity (thyristors photothyristors, opto-thyristors dinistorov, triacs, etc.) having a self-protection against breakdown when switching due to overexertion.; The technical result of the proposed solutions is to provide a self-protected thyristor (self-protection) against overvoltage in a large range of voltage rise speeds - from quasistatic mode to ultra-high speeds of the order of 10 kV / ms and, consequently, improving the reliability of the thyristor.; Summary of the utility model: The semiconductor structure thyristor comprising a main thyristor structure and within the centrally symmetric auxiliary thyristor structure in an amount of not less than two, having a local region with low resistivity in the semiconductor structure the center in the n-base near the collector pn-junction, in vicinity of the center of the second or a subsequent auxiliary thyristor structures in p-base near the collecting pn-transition is formed by one or several local raids stey with low resistivity, the resistivity in the area (s) is greater than the local region in the center, and less than the main thyristor structure, and this area (s) extends beyond the local area of ​​the region in the center of the semiconductor structure, as a result which avalanche breakdown voltage of pn transition near the center of the auxiliary thyristor structure with said region of greater resistance and differential channel (channel) values ​​less avalanche similar parame pit in the center of the semiconductor structure.