首页> 外国专利> METHOD TO SORT CMOS MICROCIRCUIT CHIPS MANUFACTURED ON SILICON-ON-INSULATOR STRUCTURES BY RADIATION RESISTANCE

METHOD TO SORT CMOS MICROCIRCUIT CHIPS MANUFACTURED ON SILICON-ON-INSULATOR STRUCTURES BY RADIATION RESISTANCE

机译:通过辐射电阻对在绝缘体上硅结构上制造的CMOS微电路芯片进行排序的方法

摘要

FIELD: electricity.;SUBSTANCE: invention is designed to sort CMOS microcircuit chips manufactured on silicon-on-insulator structures by radiation resistance. Statistically significant sample of microcircuit chips of selected type are radiated to the required dose with periodic measurements of static consumption current. For each microcircuit chip from the sample previously resistance of a test resistor "p-pocket" located on a crystal cut path is measured on plates. The norm is identified for resistance of the test resistor "p-pocket" by comparison of maximum values of static consumption current in process of dose gain and values of test resistor "p-pocket" resistance with account of the required norm for static consumption current for the selected type of microcircuit chips. Sorting of further batches of microcircuit chips is carried out by the criterion of resistance of "p-pocket" test resistor measured for each microcircuit chip on plates.;EFFECT: it is not required to radiate each microcircuit chip with sources of radiation, reduced time and labour inputs.;2 dwg
机译:技术领域本发明旨在通过辐射电阻对在绝缘体上硅结构上制造的CMOS微电路芯片进行分类。具有统计意义的选定类型微电路芯片的样本通过定期测量静态消耗电流而辐射到所需剂量。对于来自样品的每个微电路芯片,预先在板上测量位于切晶路径上的测试电阻器“ p-pocket”的电阻。通过比较剂量增益过程中静态消耗电流的最大值与测试电阻器“ p-pocket”电阻的值,并考虑静态消耗电流的所需规范,来确定测试电阻器“ p-pocket”的电阻的标准适用于所选类型的微电路芯片。按照为板上的每个微电路芯片测量的“ p型”测试电阻器的电阻标准对其他批次的微电路芯片进行分类。效果:不需要用辐射源辐射每个微电路芯片,减少了时间和人工投入。; 2 dwg

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