Bipolar power semiconductor component with a p - emitter and more highly doped zones in the p - emitter and production method

摘要

Bipolar power semiconductor component having a semiconductor body (1), in which in a vertical direction (v) successively a p - doped emitter (8), a n - doped base (7), a p - doped base (6) and an n - doped the main emitter (5) are arranged, wherein the p - doped emitter (8) a number of strongly p - doped zones (82) with a locally increased p - doping the like and is completely formed by a zone (81) with a weaker p - doping are surrounded.