Different threshold value voltage is a position in pmos - transistors by means of different production of a channel half conductor material

摘要

In complex semiconductor components are metal gate electrodes structures with a large ε in an early process step is provided, wherein the threshold value voltage is a position for p - transistors on the basis of a threshold value voltage of an adjusting ends semiconductor alloy, for example a silicon / germanium - alloy, for ‘ long channel components " is achieved, while short channel components during the selective epitaxial growth of the silicon / germanium - alloy are masked. In some illustrative embodiments, the threshold value voltage is a position, without halo - implantation processes for the p - transistors are carried out, while the threshold voltage for the n - transistors is set by means of a halo - implantations.